Laptop Memory

(1,670)

• CAS Latency: 22
• Timing: 22-22-22-52
• Voltage: 1.20V
• Multi-channel Kit: Dual Channel Kit
• Model #: F4-3200C22D-32GRS

(1,670)

• CAS Latency: 22
• Timing: 22-22-22-52
• Voltage: 1.20V
• Multi-channel Kit: Dual Channel Kit
• Model #: F4-3200C22D-64GRS

Limited time offer, ends 01/06

• CAS Latency: 17
• Voltage: 1.20V
• Recommend Use: High Performance or Gaming Memory
• Parts: 3 Years
• Model #: DDR4 for laptop 8gb

(302)

• CAS Latency: 22
• Timing: 22-22-22
• Voltage: 1.20V
• Buffered/Registered: Unbuffered
• Model #: CT2K16G4SFRA32A

(437)

• CAS Latency: 22
• Timing: 22-22-22-53
• Voltage: 1.20V
• Model #: CMSX16GX4M1A3200C22

(302)

• CAS Latency: 22
• Timing: 22-22-22
• Voltage: 1.20V
• Buffered/Registered: Unbuffered
• Model #: CT16G4SFRA32A

(86)

• CAS Latency: 40
• Timing: 40-39-39
• Voltage: 1.10V
• Buffered/Registered: Unbuffered
• Model #: CT2K16G48C40S5

(86)

• CAS Latency: 40
• Timing: 40-39-39
• Voltage: 1.10V
• Buffered/Registered: Unbuffered
• Model #: CT2K32G48C40S5

(302)

• CAS Latency: 22
• Timing: 22-22-22
• Voltage: 1.20V
• Buffered/Registered: Unbuffered
• Model #: CT2K8G4SFRA32A

(437)

• CAS Latency: 22
• Timing: 22-22-22-53
• Voltage: 1.20V
• Features: 32GB (2x16GB) DDR4 SODIMM kit for 8th Generation or newer Intel Core i7, and AMD Ryzen 4000 Seires notebooks 3200MHz 22-22-22-53 latency 1.2V Auto-overclocking with compatible notebooks (no BIOS configuration required)
• Model #: CMSX32GX4M2A3200C22

(437)

• CAS Latency: 16
• Timing: 16-16-16-39
• Voltage: 1.20V
• Buffered/Registered: Unbuffered
• Model #: CMSX32GX4M2A2400C16

(86)

• CAS Latency: 46
• Voltage: 1.10V
• Buffered/Registered: Unbuffered
• Part Number: CT2K32G56C46S5
• Model #: CT2K32G56C46S5

(73)

• CAS Latency: 40
• Timing: 40-40-40
• Voltage: 1.10V
• Multi-channel Kit: Dual Channel Kit
• Model #: F5-5600S4040A32GX2-RS

(302)

• CAS Latency: 22
• Timing: 22-22-22
• Voltage: 1.20V
• Buffered/Registered: Unbuffered
• Model #: CT8G4SFRA32A

(1,670)

• CAS Latency: 18
• Timing: 18-18-18-43
• Voltage: 1.20V
• Buffered/Registered: Unbuffered
• Model #: F4-2666C18D-32GRS

(109)

• CAS Latency: 22
• Timing: 22-22-22
• Voltage: 1.20V
• Buffered/Registered: Unbuffered
• Model #: CT32G4SFD832A

(224)

• CAS Latency: 22
• Timing: 22-22-22-52
• Voltage: 1.20V
• Features: All new generation product of DRAM module 1.2V memory module Massive 32GB Kit
• Model #: TED48G3200C22-S01

(437)

• CAS Latency: 22
• Timing: 22-22-22-53
• Voltage: 1.20V
• Buffered/Registered: Unbuffered
• Model #: CMSX64GX4M2A3200C22

(1,670)

• CAS Latency: 18
• Timing: 18-18-18-43
• Voltage: 1.20V
• Multi-channel Kit: Dual Channel Kit
• Model #: F4-3200C18D-32GRS

(73)

• CAS Latency: 40
• Timing: 40-40-40
• Voltage: 1.10V
• Multi-channel Kit: Dual Channel Kit
• Model #: F5-5600S4040A16GX2-RS

(437)

• CAS Latency: 18
• Timing: 18-19-19-39
• Voltage: 1.20V
• Buffered/Registered: Unbuffered
• Model #: CMSX16GX4M2A2666C18

(86)

• CAS Latency: 46
• Voltage: 1.10V
• Buffered/Registered: Unbuffered
• Part Number: CT32G56C46S5
• Model #: CT32G56C46S5

(1,670)

• CAS Latency: 15
• Timing: 15-15-15-36
• Voltage: 1.20V
• Buffered/Registered: Unbuffered
• Model #: F4-2133C15D-32GRS

(167)

• CAS Latency: 19
• Voltage: 1.20V
• Buffered/Registered: Unbuffered
• Features: Speeds up to 3200 MT/s and faster data rates are expected to be available as DDR4 technology matures Increase bandwidth by up to 30% Reduce Power consumption by up to 40% and extend battery life Faster burst access speeds for improved sequential data throughput Optimized for next Generation Processors and Platforms
• Model #: CT4G4SFS8266

(224)

• CAS Latency: 22
• Timing: 22-22-22-52
• Voltage: 1.20V
• Features: All new generation product of DRAM module 1.2V memory module Massive 32GB Kit
• Model #: TED432G3200C22-S01

(30)

• CAS Latency: 17
• Timing: 17-17-17
• Voltage: 1.20V
• Buffered/Registered: Unbuffered
• Model #: CT2K8G4SFS824A

(73)

• CAS Latency: 46
• Timing: 46-45-45
• Voltage: 1.10V
• Multi-channel Kit: Dual Channel Kit
• Model #: F5-5600S4645A32GX2-RS

• CAS Latency: 19
• Timing: 19-19-19
• Voltage: 1.20V
• Model #: KCP426SD8/16

• CAS Latency: 20
• Timing: 20-22-22
• Voltage: 1.20V
• Features: Power Supply: VDD = 1.2V Typical VDDQ = 1.2V Typical VPP = 2.5V Typical VDDSPD = 2.2V to 3.6V On-Die termination (ODT) 16 internal banks; 4 groups of 4 banks each Bi-Directional Differential Data Strobe 8 bit pre-fetch Burst Length (BL) switch on-the-fly BL8 or BC4(Burst Chop) Height 1.18" (30.00mm)
• Model #: KF432S20IB/8

(1,670)

• CAS Latency: 22
• Timing: 22-22-22-52
• Voltage: 1.20V
• Features: Optimized Compatibility with 10th / 11th Gen Intel Core Processors
• Model #: F4-3200C22S-16GRS

(8)

• CAS Latency: 17
• Voltage: 1.20V
• Buffered/Registered: Unbuffered
• Multi-channel Kit: Dual Channel Kit
• Model #: HMA81GS6AFR8N

(73)

• CAS Latency: 46
• Timing: 46-45-45
• Voltage: 1.10V
• Multi-channel Kit: Dual Channel Kit
• Model #: F5-5600S4645A16GX2-RS

(224)

• CAS Latency: 22
• Timing: 22-22-22-52
• Voltage: 1.20V
• Features: All new generation product of DRAM module 1.2V memory module Massive 32GB Kit
• Model #: TED432G3200C22DC-S01

(437)

• CAS Latency: 22
• Timing: 22-22-22-53
• Voltage: 1.20V
• Features: 16GB (2x8GB) DDR4 SODIMM kit for 8th Generation or newer Intel Core i7, and AMD Ryzen 4000 Seires notebooks 3200MHz 22-22-22-53 latency 1.2V Auto-overclocking with compatible notebooks (no BIOS configuration required)
• Model #: CMSX16GX4M2A3200C22

(77)

• CAS Latency: 17
• Timing: 17-17-17
• Voltage: 1.20V
• Buffered/Registered: Unbuffered
• Model #: CT8G4SFS824A

(46)

• CAS Latency: 17
• Timing: 17-17-17
• Voltage: 1.20V
• Buffered/Registered: Unbuffered
• Model #: CT16G4SFD824A

(437)

• CAS Latency: 18
• Timing: 18-18-18-43
• Voltage: 1.20V
• Buffered/Registered: Unbuffered
• Model #: CMSX32GX4M1A2666C18