Samco 16GB DDR4 3200MHz UDIMM Desktop Memory

VDD = VDDQ = 1.2V ±60mV
VPP = 2.5V, 125mV/+250mV
On-die, internal, adjustable VREFDQ generation
1.2V pseudo open-drain I/O
TC of 0°C to 85°C
64ms, 8192-cycle refresh at 0°C to 85°C
16 internal banks (x4,
x8): 4 groups of 4 banks each
8n-bit prefetch architecture
Programmable data strobe preambles
Data strobe preamble training
Command/Address latency (CAL)
Multipurpose register READ and WRITE capability
Write and read leveling
Self refresh mode
Low-power auto self refresh (LPASR)
Temperature controlled refresh (TCR)
Fine granularity refresh
Self refresh abort
Maximum power saving
Output driver calibration
Nominal, park, and dynamic on-die termination (ODT)
Data bus inversion (DBI) for data bus
Command/Address (CA) parity
Databus write cyclic redundancy check (CRC)
Per-DRAM addressability
Post package repair (PPR) and soft post package repair (sPPR) modes
JEDEC JESD-79-4 compliant